MOQ | 60 mm |
Port | shanghai |
Lead Time | 30days |
SiC bulk crystal supplier sell SiC substrate wafer factory price
We provide SiC bulk crystal at amazing price. We also offer high quality low MPD SiC substrate wafer with 4 inch and 6 inch. SiC ingot thickness is 15-20mm, SiC wafer thickness N type 350um SI type 500um. Silicon carbide has high energy conversion efficiency, and will not decrease with the increase of frequency, silicon carbide device operating frequency can reach 10 times of silicon based devices, the same specification of silicon carbide MOSFET total energy loss is only 30% of silicon based IGBT. Silicon carbide materials will gradually replace silicon in the fields of high temperature, high frequency and high frequency, and play an important role in 5G communications, aerospace, new energy vehicles and smart power grids.