4inch SiC substrate supplier 4H-N SiC wafer maufacturer

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4inch SiC substrate supplier 4H-N SiC wafer maufacturer

As the leading supplier of SiC substrate wafer, Homray material technology offer 4 inch SiC substrate with 350um thickness. The Ultralow MPD ≤1cm-2，SiC wafer is double side polished. The package way of SiC substrate wafer use cassette or singe wafer epack.

Because of its outstanding material properties SiC-based electronics and devices can work in very hostile environment, where operation of conventional silicon-based electronics is not possible anymore. Silicon carbide's ability to work under high temperature, high power and high radiation conditions enable large enhancements of device-performance in a wide variety of applications.

Electronics based on SiC shows advantages compared to Si-devices, where environmental conditions are adverse, i.e. ionizing radiation, heat-aggressive chemicals. For instance, SiC-based electronics would help to reduce weight and therefore costs of spacecraft, since SiC-devices showed to be much more resistant to ionizing radiation than Si-devices. Thus, a reduction of radiation-shielding is possible. Further, they may reduce or eliminate the use of cooling systems that have to be implemented as soon as Si-electronics is used.