Fress standing GaN Substrate Manufacturer in China

Product Details

Fress standing GaN Substrate Manufacturer in China

As the leading manufacturer of GaN substrate wafer, Homray Material Technology provide 2 inch and 4inch free-standing GaN Substrate wafer. The conduction type is un-doped, usage of surface area ≥90%.

GaN is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants.GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium (Mg) to p-type.