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| MOQ | 10 pcs |
| Port | shanghai |
| Packaging | Casette |
| Lead Time | 2 weeks |
SiC suubstrate Supplier N type SiC wafer manufacturer
Homray Material Technology provide N type SiC substrate with dummy grade SiC wafer, production grade SiC substrate and ultralow MPD grade SiC wafer. The wafer thickness is 350um, double side polished. The delivery time of SiC wafer normally is 2 weeks. If you are interested in our SiC substrate wafer, please feel free to contact us directly.
SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity. The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond.
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