GaN Substrate Manufacturer Un-doped GaN wafer Supplier

Product Details

GaN Substrate Manufacturer Un-doped GaN wafer Supplier

Homray material technology is the leadig manufacuturer of GaN substrate in China, we provide 2inch GaN on Sapphire Substrate wafer with un-doped / si-doped and mg-doped. The thichkness of GaN layer are 4.5um or 20um. Singe side polished GaN wafer. The delivery time of GaN wafer is 10 days.

Gallium nitride, GaN substrate. GaN has a wide direct bandgap, strong atomic bonds and high thermal conductivity, etc., and it is a strong ability on anti-radiation, Not only is the short-wavelength optoelectronic materials, Also the replacement materials of high temperature semiconductor device, GaN can be used to make blue and green LED, or violet, ultraviolet light LD, ultraviolet detectors and high-frequency high-power electronic devices.