SiC ingots factory in China offer SiC substrate

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SiC ingots factory in China offer SiC substrate

HMT supply SiC ingots and SiC wafer with 4 inch and 6 inch. Both N type and semi-insulating type SiC ingots are available. Cutomized SiC ingots and SiC substrate are available in HMT, and you can still get the best price from HMT.Compared with traditional silicon materials, silicon carbide SiC has three most significant characteristics: large band gap width, high critical breakdown field strength and high thermal conductivity. Specifically, in terms of band gap width, 4H silicon carbide is three times that of silicon, so it can work stably at higher temperatures (such as automotive electronics); In terms of the critical breakdown field strength, silicon carbide can reach 10 times that of silicon, and can produce high-voltage power devices under the condition of higher impurity concentration and thinner drift layer thickness, so as to realize the three characteristics of "high voltage", "low conduction resistance" and "high frequency" at the same time.In terms of thermal conductivity, silicon carbide can reach 3 times that of silicon, which can improve the thermal conductivity, and high thermal conductivity is also conducive to the development of electronic components to more miniaturized.