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| Model Number | FGH40N60UF | Type | Transistor IGBT |
| Place of Origin | China | Brand Name | Original brand |
| D/C | Newest | Package Type | Throught Hole |
| Application | General Purpose | Supplier Type | Original manufacturer |
| Media Available | datasheet | Brand | High quality Transistor IGBT |
| Voltage - Collector Emitter Breakdown (Max) | 600V | Vce Saturation (Max) @ Ib, Ic | 40A |
| Power - Max | 290W | Operating Temperature | -55u00b0C ~ 175u00b0C TJ |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Applications | General Purpose | Categories | Transistors - IGBTs - Single |
| Part Status | Active | IGBT Type | Field Stop |
| RoHS Status | ROHS3 Compliant | Moisture Sensitivity Level (MSL) | Not Applicable |
| Gate Charge Typ (nC) | 120nC | VF Typ (V) | V |
| Eoff Typ (mJ) | 0.46mJ | Trr Typ (ns) | 36ns |
1301,1302 Floor,Building A,City Square,Jiabin Road,Luohu District, Shenzhen,China
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