Model Number | 2SC5200 | Type | IGBT |
Place of Origin | Guangdong, China | Brand Name | Original Brand |
D/C | New | Package Type | Through Hole |
Application | General Purpose | Brand | Transistor |
Mounting Style: | Through Hole | Package / Case: | TO-3P-3 |
Transistor Polarity: | NPN | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 230 V | Emitter- Base Voltage VEBO: | 5 V |
Collector-Emitter Saturation Voltage: | 0.4 V | Maximum DC Collector Current: | 15 A |
Pd - Power Dissipation: | 150 W | Gain Bandwidth Product fT: | 30 MHz |
Room 14E,Block D,Huaqiang Plaza,Huaqiang North Street,Futian District