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| Model Number | MBR30200PT | Type | Schottky diode |
| Place of Origin | KOREA | Brand Name | EKOWEISS |
| D/C | Latest year | Package Type | Through Hole |
| Supplier Type | Original manufacturer, ODM, Agency, Retailer, Other | Media Available | datasheet, Photo, EDA/CAD Models, Other |
| Max. Forward Voltage | 200V | Max. Reverse Voltage | 200V |
| Max. Forward Current | 30A | Max. Reverse Current | 30A |
| Brand | 30A200V MBR30200PT TO-247S | Diode Type | Schottky diode |
| Technology | Schottky diode | Voltage - Peak Reverse (Max) | 200V |
| Current - Average Rectified (Io) | 30A | Voltage - Forward (Vf) (Max) @ If | 30A200V |
| Current - Reverse Leakage @ Vr | 30A | Operating Temperature | -55TO+175 |
| Mounting Type | DIP | Package / Case | TO-247S |
| Diode Configuration | silicon wafer | Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) (per Diode) | 30A | Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | stable | Capacitance @ Vr, F | 30A200V |
| Current - Max | 30A | Resistance @ If, F | 30A200V |
| Power Dissipation (Max) | 30A200V | Capacitance Ratio | 30A200V |
| Capacitance Ratio Condition | 30A200V | Q @ Vr, F | 250 @ 0.5V, 50MHz |
| Configuration | silicon wafer | Voltage - Zener (Nom) (Vz) | 200V |
| Tolerance | +-5% | Power - Max | 30A200V |
| Impedance (Max) (Zzt) | 30A200V |
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