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| MOQ | 5 pcs |
| Port | qingdao ,tianjin,shanghai port |
| Packaging | plastic box |
| Lead Time | 20 |
SiC
single Crystal Wafer
| Major capability parameter | |
| Growth method | MOCVD |
| Crystal Structure | M6 |
| Unit cell constant | a=3.08 Å c=15.08 Å |
| Sequence | ABCACB |
| Direction | <0001> 3.5 º |
| With clearance | 2.93 eV |
| Hardness | 9.2（mohs） |
| Heat travels @300K | 5 W/ cm.k |
| Dielectric constants | e(11)=e(22)=9.66 e(33)=10.33 |
| Size | 10x3，10x5，10x10，15x15，，20x15，20x20， |
| dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |
| Thickness | 0.5mm，1.0mm |
| Polishing | Single or double |
| Crystal orientation | <001>±0.5º |
| redirection precision | ±0.5° |
| Redirection the edge: | 2°（special in 1°） |
| Angle of crystalline | Special size and orientation are available upon request |
| Ra: | ≤5Å（5µm×5µm） |
| Pack | 100 clean bag，1000 exactly clean bag |
Science avenue Road, Zhengzhou City, Henan Province,China
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