Si3N4 ceramic substrate for IGBT application

Product Details

Silicon nitrides (Si3N4) manufacturer feature an excellent combination of material properties. They are nearly as light as silicon carbide (SiC), but their microstructure gives them excellent thermal shock resistance and their high fracture toughness makes them resistant to impacts and shocks.

Properties of Silicon Nitride (Si3N4)

Very low density (3.21 g/cm3)

Very high fracture toughness (7 MPam1/2)

Good flexural strength (850 MPa)

Very good thermal shock resistance: High thermal stress parameters (569 K)

Maximum operating temperature in an oxidizing atmosphere: 1,300°C

Maximum operating temperature in a neutral atmosphere: 1,600°C

Silicon Nitrides (Si3N4) Feature An Excellent Combination Of Material Properties. They Are Nearly As Light As Silicon Carbide (SiC), But Their Microstructure Gives Them Excellent Thermal Shock Resistance And Their High Fracture Toughness Makes Them Resistant To Impacts And Shocks.

Feature

High Strength (High Reliability)

Similar To The Thermal Expansion Coefficient Of Semiconductors Such As Si, SiC, And GaN

High Dielectric Strength

High Bending Strength

Main Use Of Precision Ceramics For Electronics (Si3N4=Silicon Nitride)

Power Module Substrates, Si3N4 ceramic substrate for IGBT substrate

LED Substrates

Submount For Optical Pick-Up

Heat Dissipation Substrates