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| Quantity | 1 - 2697 |
| Price | 0.6 |
| MOQ | 1 1 |
| Port | Hong Kong |
| Lead Time | 3days |
General Description： HGQ022N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5*6, which accords with the RoHS standard.
FLAT 1512,15/F,LUCKY CENTRE,NO.165-171 WAN CHAI ROAD,WANCHAI,HONG KONG
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