Model Number | IRF3205PBF | Type | Transistors Mosfet, Field-Effect Transistor |
Place of Origin | Guangdong, China | Brand Name | Original Brand |
D/C | NEWEST | Package Type | Throught Hole |
Application | General Purpose | Supplier Type | Original manufacturer, ODM, Agency, Retailer |
Media Available | datasheet, Photo, EDA/CAD Models | Brand | MOSFET N-CH 55V 110A TO-220AB |
Operating Temperature | -55u00b0C ~ 175u00b0C (TJ) | Mounting Type | Through Hole, Through Hole |
Package / Case | TO-220-3, TO-220-3 | FET Type | N-Channel, N-Channel |
Drain to Source Voltage (Vdss) | 55V | Current - Continuous Drain (Id) @ 25u00b0C | 110A (Tc) |
Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V | Vgs(th) (Max) @ Id | 4V 250uA |
Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Vgs (Max) | u00b120V |
Description | MOSFET N-CH 55V 110A TO-220AB | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Part Status | Active | Technology | MOSFET (Metal Oxide) |
Product Name | N-CH 55V 110A TO-220AB Through Hole Transistors MOSFETs IRF3205PBF | Packaging | Tube |
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