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25A/1200V Pim in One-Package IGBT for Servo Driver Amplifier

Portshenzhen
Lead Time3days to 3weeks

Product Details

Product Photo:
View File
Product parameter :

Parameter symbol conditions value
unit
Collector-Emitter Voltage VCES VGE=0V, IC =1mA, Tvj=25ºC 1200 V
Continuous Collector Current IC Tc=100ºC 600
A
Peak Collector Current ICRM tp=1ms 1200
V
Gate-Emitter Voltage VGES Tvj=25ºC ±20
V
Total Power Dissipation (IGBT-inverter) Ptot Tc=25ºC
Tvjmax=175ºC
27777
W




Features

  • Highest power density
  • Tj max = 175°C
  • PressFIT control pins and screw power terminals
  • Integrated NTC temperature sensor
  • Isolated baseplate
  • Low Vce(sat) with Planner technology
  • Vce(sat) with positive temperature coefficient
  • Including fast & soft recovery anti-parallel FWD
  • High short circuit capability(10us)
  • Low inductance module structure

Benefits

  • Higher inverter output current for the same frame size
  • Reduced system costs by simplification of the inverter systems
  • Easy and most reliable assembly
  • High inter-connection reliability
  • suitable for press-in & soldering process

Applications

  • Commercial, construction and agricultural vehicles (CAV)
  • Motor control and drives
  • Solutions for solar energy systems
  • Uninterruptible Power Supply (UPS)
  • Soft switching welding machine
  • AC and DC servo drive amplifier

E52/E53 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 900 A. This is possible through the new IGBT7 technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


600A/1200V Sic IGBT Power Module for Automobile Application
Package drawing

600A/1200V Sic IGBT Power Module for Automobile Application


E52 Series products:

Model Vces(V) Ic(T=80)(A) VCE(sat) Tj=125ºC Eon+Eof(Tj=125)(mj) Rthjc(KW)
WGL450B65E52 650 450 1.45 43 0.09
WGL600B65E52 650 600 1.45 54 0.06
WGL300B120E52 1200 300 1.85 62
0.04
WGL450B120E52 1200 450 1.85 91
0.03
WGL600B120E52 1200 600 1.85 121
0.02




FAQ:

1.Why is the IGBT specified for 175ºC overload?


The CETC IGBT is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.

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