Product type : CZ silicon Wafers
Wafer finish front side : Polished
Wafer finish backside : Lapped and then etched, without saw damaged layer.
Wafer orientation : <100> 1 deg.
Diameter : 150,0 0,3 mm
Primary flat : SEMI
Secondary flat : SEMI
Doping : P-type (Boron)
Resistivity : 2,0 0,5 cm
Bulk minority charge carrier lifetime : > 100 microsec
Thickness : 280,0 25,0 m
Total Thickness Variation (TTV) : < 12 m
Bow : < 30 m
Warp : < 30 m
Quantity 300pcs
Destination : Korea
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